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NXP Semiconductors Electronic Components Datasheet

PHX3055E Datasheet

N-channel TrenchMOS transistor

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Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX3055E
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
• Isolated mounting tab
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 55 V
ID = 9 A
RDS(ON) 150 m(VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode,
field-effect power transistor in a
plastic envelope with an electrically
isolated mounting tab. The device
uses ’trench’ technology to achieve
low on-state resistance.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHX3055E is supplied in the
SOT186A (isolated TO220AB)
conventional leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
± 20
9
5.6
36
21
150
UNIT
V
V
V
A
A
A
W
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
August 1999
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHX3055E Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX3055E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 3.3 A;
energy
tp = 220 µs; Tj prior to avalanche = 25˚C;
VDD 25 V; RGS = 50 ; VGS = 10 V; refer
to fig:15
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
25
UNIT
mJ
- 9A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
55
MAX.
6
-
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 5.5 A
VDS = 25 V; ID = 5.5 A
VGS = ±10 V; VDS = 0 V
VDS = 55 V; VGS = 0 V;
Tj = -55˚C
Tj = 150˚C
Tj = -55˚C
Tj = 150˚C
Tj = 150˚C
ID = 10 A; VDD = 44 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; RD = 2.7 ;
RG = 5.6 ; VGS = 10 V
Resistive load
Internal drain inductance
Internal source inductance
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
55 -
-V
50 -
-V
2.0 3.0 4.0 V
1.1 -
-V
- - 6V
- 120 150 m
- 210 263 m
1.5 3.2 -
S
- 10 100 nA
- 0.05 10 µA
- - 100 µA
- 5.8 - nC
- 1.5 - nC
- 3.2 - nC
- 3 10 ns
- 26 35 ns
- 8 15 ns
- 10 20 ns
- 4.5 - nH
- 7.5 - nH
- 190 250 pF
- 55 80 pF
- 40 50 pF
August 1999
2
Rev 1.000


Part Number PHX3055E
Description N-channel TrenchMOS transistor
Maker NXP
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PHX3055E Datasheet PDF






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