PHX3055E Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Features - ’Trench’ technology - Low on-state resistance - Fast switching - Isolated mounting tab SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 9 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope with an electrically isolated mounting tab. The device uses ’trench’ technology to achieve low on-state resistance. Applications:- d.c. to d.c. converters - switched mode power supplies The PHX3055E is supplied in the SOT186A (isolated TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source...