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NXP Semiconductors Electronic Components Datasheet

PHX23NQ10T Datasheet

N-channel TrenchMOS transistor

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Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX23NQ10T
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 13 A
RDS(ON) 70 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies
The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
PIN DESCRIPTION
1 gate
case
2 drain
3 source
case
isolated
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
13
8
52
27
150
UNIT
V
V
V
A
A
A
W
˚C
September 1999
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHX23NQ10T Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX23NQ10T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 14 A;
energy
tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD 25 V; RGS = 50 ; VGS = 10 V; refer
to fig:15
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
93
UNIT
mJ
- 23 A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT186a package, in free air
MIN. TYP. MAX. UNIT
- - 4.6 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 13 A
VGS = ± 10 V; VDS = 0 V
VDS = 100 V; VGS = 0 V
Tj = -55˚C
Tj = 150˚C
Tj = -55˚C
Tj = 150˚C
Tj = 150˚C
ID = 23 A; VDD = 80 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 50 V; RD = 2.2 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal source inductance
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
100 -
-
89 -
-
234
1.25 -
-
- -6
- 49 70
- 115 163
- 10 100
- 0.05 10
- - 500
V
V
V
V
V
m
m
nA
µA
µA
- 22 - nC
- 5 - nC
- 10 - nC
- 8 - ns
- 39 - ns
- 26 - ns
- 24 - ns
- 4.5 - nH
- 7.5 - nH
- 890 1187 pF
- 139 167 pF
- 83 109 pF
September 1999
2
Rev 1.000


Part Number PHX23NQ10T
Description N-channel TrenchMOS transistor
Maker NXP
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