PHX20N06T
Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using Trench MOS™ technology.
1.2 Features s Standard level patible s Isolated package.
1.3 Applications s DC motor control s DC-to-DC converters s Synchronous rectification s General purpose power switching.
1.4 Quick reference data
.. s VDS ≤ 55 V s Ptot ≤ 23 W s ID ≤ 12.9 A s RDSon ≤ 75 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT186A (TO-220F), simplified outline and symbol Description gate (g) mb d
Simplified outline
Symbol source (s) drain (d) mounting base; isolated g s
MBB076
1 2 3
MBK110
SOT186A (TO-220F)
Philips Semiconductors
N-channel Trench MOS™ standard level FET
3. Ordering information
Table 2: Ordering information Package Name PHX20N06T TO-220F Description
Version Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 lead TO-220 ‘full pack’ Type number
4. Limiting values
Table 3: Limiting values In...
