Datasheet Details
| Part number | PHX1N50E |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 24.88 KB |
| Description | PowerMOS transistor Isolated version fo PHP1N50E |
| Datasheet |
 PHX1N50E Datasheet
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| Part number | PHX1N50E |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 24.88 KB |
| Description | PowerMOS transistor Isolated version fo PHP1N50E |
| Datasheet |
PHX1N50E Datasheet
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N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.
Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHX1N50E QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo.
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|---|---|
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| PHX1N60E | PowerMOS transistor Isolated version of PHP1N60E |
| PHX10N40E | PowerMOS transistors Avalanche energy rated |
| PHX14NQ20T | N-channel TrenchMOS transistor |
| PHX15N06E | PowerMOS transistor Isolated version of PHP20N06E |
| PHX18NQ20T | N-channel enhancement mode field-effect transistor |
| PHX20N06T | N-channel standard level FET |
| PHX23NQ10T | N-channel TrenchMOS transistor |
| PHX23NQ11T | N-Channel MOSFET |