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NXP Semiconductors Electronic Components Datasheet

PHX1N40 Datasheet

PowerMOS transistor

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Philips Semiconductors
PowerMOS transistor
Product specification
PHX1N40
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a full
pack plastic envelope featuring high
avalanche energy capability, stable
off-state characteristics, fast
switching and high thermal cycling
performance with low thermal
resistance. Intended for use in
Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
400
1.7
25
3.5
UNIT
V
A
W
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
ID Continuous drain current
IDM
PD
PD/Tmb
VGS
EAS
IAS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Tj, Tstg
Operating junction and
storage temperature range
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
Ths > 25 ˚C
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
1.7
1.1
7
25
0.2
± 30
100
2.5
150
UNIT
A
A
A
W
W/K
V
mJ
A
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
June 1997
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHX1N40 Datasheet

PowerMOS transistor

No Preview Available !

Philips Semiconductors
PowerMOS transistor
Product specification
PHX1N40
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN. TYP. MAX. UNIT
- - 5 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
V(BR)DSS /
Tj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
IGSS
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Ld
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ls Internal source inductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VGS = 10 V; ID = 1.25 A
VDS = VGS; ID = 0.25 mA
VDS = 30 V; ID = 1.25 A
VDS = 400 V; VGS = 0 V
VDS = 320 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
ID = 2.5 A; VDD = 320 V; VGS = 10 V
VDD = 200 V; ID = 2.5 A;
RG = 24 ; RD = 78
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN.
400
-
-
2.0
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.45 - V/K
2.0 3.5
3.0 4.0 V
1.5 -
S
1 25 µA
30 250 µA
10 200 nA
20 25 nC
2 3 nC
8 12 nC
10 - ns
25 - ns
46 - ns
25 - ns
4.5 - nH
7.5 - nH
240 -
44 -
26 -
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
Ths = 25˚C
(body diode)
ISM Pulsed source current (body Ths = 25˚C
diode)
VSD Diode forward voltage
IS = 2.5 A; VGS = 0 V
trr Reverse recovery time IS = 2.5 A; VGS = 0 V;
dI/dt = 100 A/µs
Qrr Reverse recovery charge
MIN. TYP. MAX. UNIT
- - 2.5 A
- - 10 A
- - 1.2 V
- 200 -
ns
- 2.0 - µC
June 1997
2
Rev 1.000


Part Number PHX1N40
Description PowerMOS transistor
Maker NXP
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PHX1N40 Datasheet PDF






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