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PHX1N40 - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.

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Datasheet Details

Part number PHX1N40
Manufacturer NXP Semiconductors
File Size 60.40 KB
Description PowerMOS transistor
Datasheet download datasheet PHX1N40 Datasheet
Additional preview pages of the PHX1N40 datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistor PHX1N40 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 400 1.7 25 3.
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