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NXP Semiconductors Electronic Components Datasheet

PHX18NQ20T Datasheet

N-channel enhancement mode field-effect transistor

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PHX18NQ20T
N-channel enhancement mode field-effect transistor
Rev. 01 — 28 August 2000
Product specification
M3D308
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHX18NQ20T in SOT186A.
2. Features
s TrenchMOS™ technology
s Low on-state resistance
s Fast switching
s Low thermal resistance
s Isolated tab.
3. Applications
s Off-line switched mode power supplies
c
c s Television and computer monitor power supplies
s DC to DC converters
s Motor control circuits
4. Pinning information
Table 1: Pinning - SOT186A, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
isolated tab
3 source (s)
Tab isolated
03ab49
123
Symbol
d
g
03ab30
s
1. TrenchMOS is a trademark of Royal Philips Electronics.


NXP Semiconductors Electronic Components Datasheet

PHX18NQ20T Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
PHX18NQ20T
N-channel FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Ths = 25 °C; VGS = 10 V
Ths = 25 °C
VGS = 10 V; ID = 8 A; Tj = 25 oC
VGS = 10 V; ID = 8 A; Tj = 150 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C
Tj = 25 to 150 °C; RGS = 20 k
Ths = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Ths = 100 °C; VGS = 10 V; Figure 2
Ths = 25 °C; pulsed; tp 10 µs;
Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Ths = 25 °C; Figure 1
IS source (diode forward) current (DC) Tamb = 25 °C
ISM peak source (diode forward) current Tamb = 25 °C; pulsed; tp 10 µs
Typ Max Unit
200 V
8.2 A
30 W
150 °C
130 180 m
450 m
Min Max Unit
200 V
200 V
− ±20 V
8.2 A
5.2 A
33 A
30 W
55 +150 °C
55 +150 °C
8.2 A
33 A
9397 750 07452
Product specification
Rev. 01 — 28 August 2000
© Philips Electronics N.V. 2000. All rights reserved.
2 of 15


Part Number PHX18NQ20T
Description N-channel enhancement mode field-effect transistor
Maker NXP
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