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PHX18NQ20T
N-channel enhancement mode field-effect transistor
Rev. 01 — 28 August 2000
M3D308
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHX18NQ20T in SOT186A.
2. Features
s s s s s TrenchMOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab.
3. Applications
c c
s s s s
Off-line switched mode power supplies Television and computer monitor power supplies DC to DC converters Motor control circuits
4. Pinning information
Table 1: Pin 1 2 3 Tab Pinning - SOT186A, simplified outline and symbol Description gate (g)
isolated tab d
Simplified outline
Symbol
drain (d) source (s) isolated
03ab49
g
123
s
03ab30
1.