PHX18NQ20T
Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™1 technology. Product availability: PHX18NQ20T in SOT186A.
2. Features s s s s s Trench MOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab.
3. Applications c c s s s s
Off-line switched mode power supplies Television and puter monitor power supplies DC to DC converters Motor control circuits
4. Pinning information
Table 1: Pin 1 2 3 Tab Pinning
- SOT186A, simplified outline and symbol Description gate (g) isolated tab d
Simplified outline
Symbol drain (d) source (s) isolated
03ab49 g
123 s
03ab30
1.
Trench MOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
N-channel FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Ths = 25 °C; VGS = 10 V Ths = 25 °C VGS = 10 V; ID = 8 A; Tj = 25 o C
Symbol Parameter drain-source voltage (DC) drain current (DC)...
