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NXP Semiconductors Electronic Components Datasheet

PHX14NQ20T Datasheet

N-channel TrenchMOS transistor

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Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX14NQ20T , PHF14NQ20T
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 7.6 A
RDS(ON) 230 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN DESCRIPTION
1 gate
case
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
7.6
4.8
30
30
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

PHX14NQ20T Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX14NQ20T , PHF14NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 14 A;
energy
tp = 38 µs; Tj prior to avalanche = 25˚C;
VDD 25 V; RGS = 50 ; VGS = 10 V; refer
to fig 15
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
70
UNIT
mJ
- 14 A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT186A package, in free air
MIN. TYP. MAX. UNIT
- - 4.17 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 150˚C
Tj = -55˚C
VGS = 10 V; ID = 7 A
VGS = 10 V; ID = 7 A; Tj = 150˚C
VDS = 25 V; ID = 7 A
VGS = ± 10 V; VDS = 0 V
VDS = 200 V; VGS = 0 V
Tj = 150˚C
ID = 14 A; VDD = 160 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 100 V; RD = 10 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal source inductance
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
200 -
-V
178 -
-V
234V
1- -V
- - 6V
- 150 230 m
- - 540 m
6 12.1 -
S
- 10 100 nA
- 0.05 10 µA
- - 500 µA
- 38 -
-4-
- 13.3 -
nC
nC
nC
- 25 - ns
- 40 - ns
- 83 - ns
- 31 - ns
- 4.5 - nH
- 7.5 - nH
- 1500 -
- 128 -
- 60 -
pF
pF
pF
November 2000
2
Rev 1.100


Part Number PHX14NQ20T
Description N-channel TrenchMOS transistor
Maker NXP
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