PHW9N60E Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Power MOS transistors Avalanche energy rated Features - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 8.7 A RDS(ON) ≤ 0.8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package. The PHB9N60E is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION gate drain1 source SOT404 tab SOT429 (TO247) 2 drain 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 600 600 ± 30 9 5.7 36 156 150 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin 2 of the SOT404 package. December 1998 1 Rev 1.000 Philips Semiconductors Product specification Power MOS transistors Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Non-repetitive avalanche energy...