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PHW9N60E - PowerMOS transistors Avalanche energy rated

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK.

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Datasheet Details

Part number PHW9N60E
Manufacturer NXP
File Size 102.88 KB
Description PowerMOS transistors Avalanche energy rated
Datasheet download datasheet PHW9N60E Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 8.7 A RDS(ON) ≤ 0.8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package. The PHB9N60E is supplied in the SOT404 surface mounting package.
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