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PHW9N60E Datasheet

PowerMOS transistors Avalanche energy rated

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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB9N60E, PHW9N60E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 600 V
ID = 8.7 A
RDS(ON) 0.8
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB9N60E is supplied in the SOT404 surface mounting package.
PINNING
SOT404
SOT429 (TO247)
PIN DESCRIPTION
tab
1 gate
2 drain1
3 source
tab drain
2
13
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
9
5.7
36
156
150
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHW9N60E Datasheet

PowerMOS transistors Avalanche energy rated

No Preview Available !

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB9N60E, PHW9N60E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche Unclamped inductive load, IAS = 9 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
Repetitive avalanche energy2
VDD 50 V; RGS = 50 ; VGS = 10 V
IAR = 9 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
700
18
9
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 0.8 K/W
SOT429 package, in free air
- 45 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
V(BR)DSS / Drain-source breakdown
Tj voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 5 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 5 A
Drain-source leakage current VDS = 600 V; VGS = 0 V
VDS = 480 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 10 A; VDD = 480 V; VGS = 10 V
td(on) Turn-on delay time
tr Turn-on rise time
td(off) Turn-off delay time
tf Turn-off fall time
VDD = 300 V; RD = 30 ;
RG = 5.6
Ld Internal drain inductance Measured from tab to centre of die
Ld Internal drain inductance Measured from drain lead to centre of die
(SOT429 package only)
Ls Internal source inductance Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
600 -
-V
- 0.1 - %/K
- 0.68 0.8
2.0 3.0 4.0 V
4 6.5 -
S
- 2 100 µA
- 80 1000 µA
- 10 200 nA
- 75 100 nC
- 6.8 12 nC
- 37 55 nC
- 11 - ns
- 32 - ns
- 98 - ns
- 37 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 1295 -
- 163 -
- 86 -
pF
pF
pF
2 pulse width and repetition rate limited by Tj max.
December 1998
2
Rev 1.000


Part Number PHW9N60E
Description PowerMOS transistors Avalanche energy rated
Maker NXP
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