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PHW8ND50E - PowerMOS transistors FREDFET/ Avalanche energy rated

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance.
  • Fast reverse recovery diode SYMBOL d QUICK.

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Datasheet Details

Part number PHW8ND50E
Manufacturer NXP
File Size 91.19 KB
Description PowerMOS transistors FREDFET/ Avalanche energy rated
Datasheet download datasheet PHW8ND50E Datasheet
Additional preview pages of the PHW8ND50E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.
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