N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.
| Part number | PHW7N60 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 56.23 KB |
| Description | PowerMOS transistor |
| Datasheet |
 PHW7N60 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PHW11N50E | PowerMOS transistors | Philips |
| Part Number | Description |
|---|---|
| PHW7N60E | PowerMOS transistors Avalanche energy rated |
| PHW11N50E | PowerMOS transistors Avalanche energy rated |
| PHW11N50E | PowerMOS transistors Avalanche energy rated |
| PHW13N40E | PowerMOS transistors Avalanche energy rated |
| PHW14N50E | PowerMOS transistors Avalanche energy rated |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
