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NXP Semiconductors Electronic Components Datasheet

PHW35NQ20T Datasheet

N-channel TrenchMOS transistor

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Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHW35NQ20T
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 35 A
RDS(ON) 70 m
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope using ’trench
technology. The device has very
low on-state resistance. It is
intended for use in dc to dc
converters and general purpose
switching applications.
The PHW35NQ20T is supplied in
the SOT429 (TO247) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
35
25
140
250
175
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 35 A;
energy
tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:15
IAS Non-repetitive avalanche
current
MIN.
-
MAX.
462
UNIT
mJ
- 35 A
August 1999
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHW35NQ20T Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHW35NQ20T
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
in free air
TYP.
-
45
MAX.
0.6
-
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VGS = 10 V; ID = 17 A
VGS = 10 V; ID = 17 A; Tj = 175˚C
VGS = ±10 V; VDS = 0 V
VDS = 200 V; VGS = 0 V;
Tj = 175˚C
ID = 35 A; VDD = 160 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 100 V; RD = 2.7 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
200 -
-V
178 -
-V
2.0 3.0 4.0 V
1.0 -
-V
- - 6V
- 60 70 m
- - 203 m
- 2 100 nA
- 0.05 10 µA
- - 500 µA
- 77 - nC
- 16 - nC
- 28 - nC
- 22 -
- 100 -
- 80 -
- 90 -
ns
ns
ns
ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 4570 -
- 370 -
- 160 -
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current
(body diode)
ISM Pulsed source current (body
diode)
VSD Diode forward voltage
IF = 35 A; VGS = 0 V
trr
Reverse recovery time
IF = 20 A; -dIF/dt = 100 A/µs;
Qrr Reverse recovery charge VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
- - 35 A
- - 140 A
- 0.85 1.2 V
- 160 - ns
- 1.0 - µC
August 1999
2
Rev 1.000


Part Number PHW35NQ20T
Description N-channel TrenchMOS transistor
Maker NXP
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