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NXP Semiconductors Electronic Components Datasheet

PHW20N50E Datasheet

PowerMOS transistors Avalanche energy rated

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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHW20N50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 20 A
RDS(ON) 0.27
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHW20N50E is supplied in the
SOT429 (TO247) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
20
12.4
80
250
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
Unclamped inductive load, IAS = 20 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
Repetitive avalanche energy1
VDD 50 V; RGS = 50 ; VGS = 10 V
IAR = 20 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
1300
32
20
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
December 1998
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHW20N50E Datasheet

PowerMOS transistors Avalanche energy rated

No Preview Available !

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHW20N50E
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT429 package, in free air
MIN. TYP. MAX. UNIT
- - 0.5 K/W
- 45 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
V(BR)DSS / Drain-source breakdown
Tj voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 10 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 10 A
Drain-source leakage current VDS = 500 V; VGS = 0 V
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 20 A; VDD = 400 V; VGS = 10 V
td(on) Turn-on delay time
tr Turn-on rise time
td(off) Turn-off delay time
tf Turn-off fall time
VDD = 250 V; RD = 12 ;
RG = 3.9
Ld Internal drain inductance Measured from tab to centre of die
Ld Internal drain inductance Measured from drain lead to centre of die
Ls Internal source inductance Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
500 -
-V
- 0.1 - %/K
- 0.2 0.27
2.0 3.0 4.0 V
13 18 - S
- 2 50 µA
- 100 1000 µA
- 10 200 nA
- 147 190 nC
- 12 18 nC
- 78 100 nC
- 23 -
- 72 -
- 150 -
- 75 -
ns
ns
ns
ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 3000 -
- 480 -
- 270 -
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current Tmb = 25˚C
(body diode)
ISM Pulsed source current (body Tmb = 25˚C
diode)
VSD Diode forward voltage
IS = 20 A; VGS = 0 V
trr
Reverse recovery time
IS = 20 A; VGS = 0 V; dI/dt = 100 A/µs
Qrr Reverse recovery charge
MIN. TYP. MAX. UNIT
- - 20 A
- - 80 A
- - 1.5 V
- 900 - ns
- 15 - µC
December 1998
2
Rev 1.000


Part Number PHW20N50E
Description PowerMOS transistors Avalanche energy rated
Maker NXP
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