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NXP Semiconductors Electronic Components Datasheet

PHT6N03T Datasheet

TrenchMOS transistor Standard level FET

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Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
PHT6N03T
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
trench’ technology, the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in DC-DC
converters and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC) Tsp = 25 ˚C
Drain current (DC) Tamb = 25 ˚C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
PIN CONFIGURATION
4
123
SYMBOL
g
MAX.
30
12.8
5.9
8.3
150
30
d
s
UNIT
V
A
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 100 ˚C
Tamb = 100 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-amb
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.19
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
TYP.
12
-
MAX.
30
30
16
12.8
5.9
9
4.1
51.2
23.6
8.3
1.8
150
MAX.
15
70
UNIT
V
V
V
A
A
A
A
A
A
W
W
˚C
UNIT
K/W
K/W
November 1997
1
Rev 1.200


NXP Semiconductors Electronic Components Datasheet

PHT6N03T Datasheet

TrenchMOS transistor Standard level FET

No Preview Available !

Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
PHT6N03T
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k)
MIN.
-
MAX.
2
UNIT
kV
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
VGS = 0 V; ID = 0.25 mA;
voltage
Tj = -55˚C
Gate threshold voltage
VDS = VGS; ID = 1 mA
Tj = 150˚C
Tj = -55˚C
Zero gate voltage drain current VDS = 30 V; VGS = 0 V;
Tj = 150˚C
Gate source leakage current VGS = ±10 V; VDS = 0 V
Tj = 150˚C
Gate source breakdown voltage IG = ±1 mA;
Drain-source on-state
VGS = 10 V; ID = 3.2 A
resistance
Tj = 150˚C
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
24
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
30
51
UNIT
V
V
V
V
µA
µA
µA
µA
V
m
m
DYNAMIC CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 5.9 A
ID = 5.9 A; VDD = 24 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 15 V; ID = 5.9 A;
VGS = 10 V; RG = 5
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
5
-
-
-
-
-
-
-
-
-
-
-
TYP.
10
22.5
4.5
13.5
1500
370
170
16
30
35
25
3.5
MAX.
-
-
-
-
2000
470
250
22
60
50
38
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
- 4.5 - nH
- 7.5 - nH
November 1997
2
Rev 1.200


Part Number PHT6N03T
Description TrenchMOS transistor Standard level FET
Maker NXP
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PHT6N03T Datasheet PDF






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