PHT2NQ10T
Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™1 technology. Product availability: PHT2NQ10T in SOT223
2. Features s Trench MOS™ technology s Fast switching s Surface mount package.
3. Applications s Primary side switch in DC to DC converters s High speed driver s Fast, general purpose switch.
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning
- SOT223, simplified outline and symbol Description gate (g)
Simplified outline
Symbol d drain (d) source (s) drain (d)
Top view g s
MSB002
- 1
MBB076
SOT223
1.
Trench MOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
N-channel Trench MOS transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25°C ≤ to ≤ 150 °C Tsp = 25 °C; VGS = 10 V Tsp = 25 °C VGS = 10 V; ID = 1.75 A Typ
- -
- - 315 Max 100 2.5 6.25 150 430 Unit V A W °C mΩ drain-source voltage (DC) drain current (DC) total power...
