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NXP Semiconductors Electronic Components Datasheet

PHT2NQ10T Datasheet

N-channel TrenchMOS transistor

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PHT2NQ10T
N-channel TrenchMOS transistor
M3D087 Rev. 01 — 16 October 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHT2NQ10T in SOT223
2. Features
s TrenchMOS™ technology
s Fast switching
s Surface mount package.
3. Applications
s Primary side switch in DC to DC converters
s High speed driver
s Fast, general purpose switch.
4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 drain (d)
4
3 source (s)
4 drain (d)
1
Top view
23
MSB002 - 1
SOT223
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.


NXP Semiconductors Electronic Components Datasheet

PHT2NQ10T Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25°C to 150 °C
Tsp = 25 °C; VGS = 10 V
Tsp = 25 °C
VGS = 10 V; ID = 1.75 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
drain-source voltage (DC)
drain-gate voltage (DC)
25°C to 150 °C
25°C to 150 °C; RGS = 20 k
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V;
Tsp = 25 °C; pulsed; tp 10 µs; Figure 3
Tsp = 25 °C; Figure 1
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; tp 10 µs
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; ID =2.5 A;
tp = 0.2 ms; VDD 15 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C; Figure 4
IAS non-repetitive avalanche current unclamped inductive load; VDD 15 V;
RGS = 50 ; VGS = 10 V; Figure 4
Typ Max Unit
100 V
2.5 A
6.25 W
150 °C
315 430 m
Min Max Unit
100 V
100 V
− ±20 V
2.5 A
1.6 A
10 A
6.25 W
65 +150 °C
65 +150 °C
2.5 A
10 A
32 mJ
2.5 A
9397 750 08918
Product data
Rev. 01 — 16 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 12


Part Number PHT2NQ10T
Description N-channel TrenchMOS transistor
Maker NXP
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