Datasheet4U Logo Datasheet4U.com

PHPT610035NK - NPN/NPN high power double bipolar transistor

Description

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package.

Matched version of PHPT610030NK.

PNP/PNP complement: PHPT610035PK.

Features

  • Current gain matching 5% High thermal power dissipation capability Suitable for high temperature.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHPT610035NK NPN/NPN Transistor nexperia
PHPT610035PK PNP/PNP Transistor nexperia
PHPT610030NK NPN/NPN Transistor nexperia
PHPT610030NPK NPN/PNP Transistor nexperia
PHPT610030NPK-Q NPN/PNP high power double bipolar transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PHPT610035PK PNP/PNP matched high power double bipolar transistor
PHPT60415NY NPN high power bipolar transistor
PHPT60606NY NPN high power bipolar transistor
PHP101NQ03LT TrenchMOS logic level FET
PHP1025 P-channel enhancement mode MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LFP AK 56 PHPT610035NK 14 October 2014 D NPN/NPN high power double bipolar transistor Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK. NPN/PNP complement: PHPT610035NPK. 2. Features and benefits • • • • • • Current gain matching 5% High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3.
Published: |