PHPT60606NY
PHPT60606NY is NPN high power bipolar transistor manufactured by NXP Semiconductors.
description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP plement: PHPT60606PY
2. Features and benefits
- High thermal power dissipation capability
- High temperature applications up to 175 °C
- Reduced Printed Circuit Board (PCB) requirements paring to transistors in DPAK
- High energy efficiency due to less heat generation
- AEC-Q101 qualified.
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
- Relay replacement
- Motor drive
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance
IC = 6 A; IB = 600 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 6A
- - 14 A
- 34 45 mΩ
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NXP Semiconductors
60 V, 6 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 E emitter
2 E emitter
3 E emitter
4 B base mb C collector
Simplified outline mb
LFPAK56; Power SO8 (SOT669)
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