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NXP Semiconductors Electronic Components Datasheet

PHP9NQ20T Datasheet

N-channel TrenchMOS transistor

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Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHP9NQ20T, PHB9NQ20T
PHD9NQ20T
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 8.7 A
RDS(ON) 400 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHP9NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package
The PHB9NQ20T is supplied in the SOT404 (D2PAK) surface mounting package
The PHD9NQ20T is supplied in the SOT428 (DPAK) surface mounting package
PINNING
SOT78 (TO220AB) SOT404 (D2PAK)
SOT428 (DPAK)
PIN DESCRIPTION
1 gate
tab
tab tab
2 drain 1
3 source
tab drain
1 23
2
13
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
8.7
6.2
35
88
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

PHP9NQ20T Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
TrenchMOStransistor
Product specification
PHP9NQ20T, PHB9NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 7.2A;
energy
tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD 25 V; RGS = 50 ; VGS = 10 V; refer
to fig;15
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
93
UNIT
mJ
- 8.7 A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT78 package, in free air
SOT404 & SOT428 packages, pcb
mounted, minimum footprint
MIN. TYP. MAX. UNIT
- - 1.7 K/W
- 60 - K/W
- 50 - K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 4.5 A
VDS = 25 V; ID = 4.5 A
VGS = ± 10 V; VDS = 0 V
VDS = 200 V; VGS = 0 V
Tj = -55˚C
Tj = 175˚C
Tj = -55˚C
Tj = 175˚C
Tj = 175˚C
ID = 9 A; VDD = 160 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 100 V; RD = 10 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
200 -
-V
178 -
-V
234V
1- -V
- 6V
- 300 400 m
- - 1.16
3.8 6 - S
- 10 100 nA
- 0.05 10 µA
- - 500 µA
- 24 - nC
- 4 - nC
- 12 - nC
- 8 - ns
- 19 - ns
- 25 - ns
- 15 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 959 -
- 93 -
- 54 -
pF
pF
pF
August 1999
2
Rev 1.100


Part Number PHP9NQ20T
Description N-channel TrenchMOS transistor
Maker NXP
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