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NXP Semiconductors Electronic Components Datasheet

PHP95N03LT Datasheet

N-channel TrenchMOS transistor

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PHP95N03LT; PHB95N03LT;
PHE95N03LT
N-channel TrenchMOS transistor
Rev. 01 — 02 February 2001
Product specification
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP95N03LT in SOT78 (TO-220AB)
PHB95N03LT in SOT404 (D2-PAK)
PHE95N03LT in SOT226 (I2-PAK).
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
c
4. Pinningc information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2 drain (d)
[1]
mb mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.


NXP Semiconductors Electronic Components Datasheet

PHP95N03LT Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
PHP95N03LT series
N-channel TrenchMOS transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A
VGS = 5 V; ID = 25 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 k
tp 50 µs; pulsed;
duty cycle 25 %; Tj 150 °C
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 ; VGS = 5V; starting Tj = 25 °C;
IAS non-repetitive avalanche current unclamped inductive load;
VDD = 15 V; RGS = 50 ; VGS = 5V;
starting Tj = 25 °C
Typ Max Unit
25 V
75 A
125 W
175 °C
5 7 m
7.5 9
m
Min Max Unit
25 V
25 V
− ±15 V
− ±20 V
75 A
61 A
240 A
125 W
55 +175 °C
55 +175 °C
75 A
240 A
120 mJ
75 A
9397 750 07814
Product specification
Rev. 01 — 02 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 15


Part Number PHP95N03LT
Description N-channel TrenchMOS transistor
Maker NXP
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