• Part: PHP8ND50E
  • Description: PowerMOS transistors FREDFET/ Avalanche energy rated
  • Manufacturer: NXP Semiconductors
  • Size: 91.19 KB
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Datasheet Summary

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated Features - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance - Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts...