• Part: PHP8ND50E
  • Description: PowerMOS transistors FREDFET/ Avalanche energy rated
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 91.19 KB
Download PHP8ND50E Datasheet PDF
NXP Semiconductors
PHP8ND50E
FEATURES - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance - Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP8ND50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW8ND50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB8ND50E is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION gate drain1 source SOT78 (TO220AB) tab SOT404 tab SOT429 (TO247) 2 drain 1 23 LIMITING VALUES Limiting values in accordance with...