Datasheet4U Logo Datasheet4U.com

PHP8ND50E - PowerMOS transistors FREDFET/ Avalanche energy rated

Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance.
  • Fast reverse recovery diode SYMBOL d QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHP8N50 PowerMOS transistor Philips
PHP8.4 7/500 & 15/000 Watt TVS Module Semtech Corporation
PHP8.4 (PHP8.4 - PHP500) AC POWER BUS VOLTAGE SUPPRESSOR Protek Devices
PHP101NQ04T N-channel TrenchMOS standard level FET NXP Semiconductors
PHP110NQ06LT N-channel TrenchMOS logic level FET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
PHP8N20E PowerMOS transistor
PHP8N50E PowerMOS transistors Avalanche energy rated
PHP80N06LT TrenchMOS transistor Logic level FET
PHP80N06T TrenchMOS transistor Standard level FET
PHP82NQ03LT TrenchMOS logic level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s trr = 180 ns GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.
Published: |