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NXP Semiconductors Electronic Components Datasheet

PHP87N03T Datasheet

TrenchMOS transistor Standard level FET

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Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
PHP87N03T
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in DC-DC
converters and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)1
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
30
75
142
175
10.5
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)1
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
20
75
61
240
142
175
UNIT
V
V
V
A
A
A
W
˚C
TYP.
-
60
MAX.
1.05
-
UNIT
K/W
K/W
1 Current limited by package to 75A from a theoretical value of 87A.
September 1997
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

PHP87N03T Datasheet

TrenchMOS transistor Standard level FET

No Preview Available !

Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
PHP87N03T
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k)
MIN.
-
MAX.
2
UNIT
kV
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 30 V; VGS = 0 V;
Tj = 175˚C
VGS = ±10 V; VDS = 0 V
Tj = 175˚C
IG = ±1 mA;
VGS = 10 V; ID = 25 A
Tj = 175˚C
MIN.
30
27
2
1
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
- 9 10.5 m
- - 19.5 m
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 25 A
ID = 75 A; VDD = 24 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 25 V; ID = 25 A;
VGS = 10 V; RG = 5
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
9
-
-
-
-
-
-
-
-
-
-
-
TYP.
18
51
9
29
2700
700
300
26
35
50
30
3.5
MAX.
-
-
-
-
3300
800
330
30
85
60
45
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
- 4.5 - nH
- 7.5 - nH
September 1997
2
Rev 1.100


Part Number PHP87N03T
Description TrenchMOS transistor Standard level FET
Maker NXP
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PHP87N03T Datasheet PDF






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