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NXP Semiconductors Electronic Components Datasheet

PHP7N60E Datasheet

PowerMOS transistors Avalanche energy rated

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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP7N60E, PHB7N60E, PHW7N60E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 600 V
ID = 7 A
RDS(ON) 1.2
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP7N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHW7N60E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB7N60E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB) SOT404
SOT429 (TO247)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
7
4.5
28
147
150
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998
1
Rev 1.400


NXP Semiconductors Electronic Components Datasheet

PHP7N60E Datasheet

PowerMOS transistors Avalanche energy rated

No Preview Available !

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP7N60E, PHB7N60E, PHW7N60E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 6.5 A;
tp = 0.23 ms; Tj prior to avalanche = 25˚C;
VDD 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy2 IAR = 7 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
583
13
7
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 0.85 K/W
SOT78 package, in free air
- 60 - K/W
SOT429 package, in free air
- 45 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
2 pulse width and repetition rate limited by Tj max.
December 1998
2
Rev 1.400


Part Number PHP7N60E
Description PowerMOS transistors Avalanche energy rated
Maker NXP
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PHP7N60E Datasheet PDF






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