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PHP79NQ08LT Datasheet

N-Channel MOSFET

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PHP79NQ08LT
N-channel TrenchMOS logic level FET
Rev. 03 — 26 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ General purpose power switching
„ Motors, lamps and solenoids
„ Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 9;
see Figure 10
Dynamic characteristics
QGD
gate-drain charge VGS = 5 V; ID = 25 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11; see Figure 12
Min Typ Max Unit
- - 75 V
- - 73 A
- - 157 W
- 14 16 m
- 14 - nC


NXP Semiconductors Electronic Components Datasheet

PHP79NQ08LT Datasheet

N-Channel MOSFET

No Preview Available !

NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to
drain
Simplified outline
mb
PHP79NQ08LT
N-channel TrenchMOS logic level FET
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PHP79NQ08LT
TO-220AB
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C
VGS = 5 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C
VGS = 5 V; Tmb = 25 °C; see Figure 1;
see Figure 3
tp 10 µs; pulsed; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS
source current
Tmb = 25 °C
Min Typ Max Unit
- - 75 V
- - 75 V
-15 -
15 V
- - 73 A
- - 47 A
- - 51 A
- - 67 A
- - 240 A
--
-55 -
-55 -
157 W
175 °C
175 °C
- - 67 A
PHP79NQ08LT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 April 2010
© NXP B.V. 2010. All rights reserved.
2 of 13


Part Number PHP79NQ08LT
Description N-Channel MOSFET
Maker NXP
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