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Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode
PHP6ND50E, PHB6ND50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A
g
RDS(ON) ≤ 1.5 Ω
s
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.