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PHP6ND50E Datasheet

PowerMOS transistors FREDFET/ Avalanche energy rated

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Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHP6ND50E, PHB6ND50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 5.9 A
RDS(ON) 1.5
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6ND50E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION
1 gate
tab
tab
2 drain 1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
5.9
3.7
24
125
150
UNIT
V
V
V
A
A
A
W
˚C
August 1998
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

PHP6ND50E Datasheet

PowerMOS transistors FREDFET/ Avalanche energy rated

No Preview Available !

Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHP6ND50E, PHB6ND50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 4 A;
tp = 0.17 ms; Tj prior to avalanche = 25˚C;
VDD 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 5.9 A; tp = 1 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
280
10
5.9
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 1 K/W
SOT78 package, in free air
- 60 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
1 pulse width and repetition rate limited by Tj max.
August 1998
2
Rev 1.100


Part Number PHP6ND50E
Description PowerMOS transistors FREDFET/ Avalanche energy rated
Maker NXP
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PHP6ND50E Datasheet PDF






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