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NXP Semiconductors Electronic Components Datasheet

PHP6NA60E Datasheet

PowerMOS transistors Low capacitance Avalanche energy rated

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Philips Semiconductors
PowerMOS transistors
Low capacitance
Avalanche energy rated
Preliminary specification
PHP6NA60E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Low feedback capacitance
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 600 V
ID = 6.5 A
RDS(ON) 1.2
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHP6NA60E is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
6.5
4.3
26
125
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche Unclamped inductive load, ID = 6.5 A;
energy
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
Repetitive avalanche energy1 VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
570
9.5
6.5
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
January 1998
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHP6NA60E Datasheet

PowerMOS transistors Low capacitance Avalanche energy rated

No Preview Available !

Philips Semiconductors
PowerMOS transistors
Low capacitance
Avalanche energy rated
Preliminary specification
PHP6NA60E
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 1 K/W
- 60 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
V(BR)DSS / Drain-source breakdown
Tj voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 3.25 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 3.25 A
Drain-source leakage current VDS = 600 V; VGS = 0 V
VDS = 480 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 3 A; VDD = 480 V; VGS = 10 V
td(on) Turn-on delay time
tr Turn-on rise time
td(off) Turn-off delay time
tf Turn-off fall time
VDD = 300 V; RD = 47 ;
RG = 9.1
Ld Internal drain inductance Measured from tab to centre of die
Ld Internal drain inductance Measured from drain lead to centre of die
Ls Internal source inductance Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
600 -
-V
- 0.1 - %/K
- - 1.2
2.0 3.0 4.0 V
3 4.5 -
S
- 2 100 µA
- 50 500 µA
- 10 200 nA
- - 75 nC
- 7 - nC
- 30 - nC
- - 50 ns
- - 125 ns
- - 110 ns
- - 30 ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- - 1550 pF
- 140 - pF
- 42 - pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current Tmb = 25˚C
(body diode)
ISM Pulsed source current (body Tmb = 25˚C
diode)
VSD Diode forward voltage
IS = 6.5 A; VGS = 0 V
trr
Reverse recovery time
IS = 6.5 A; VGS = 0 V; dI/dt = 100 A/µs
Qrr Reverse recovery charge
MIN. TYP. MAX. UNIT
- - 6.5 A
- - 26 A
- - 1.2 V
- 530 - ns
- 6.7 - µC
January 1998
2
Rev 1.000


Part Number PHP6NA60E
Description PowerMOS transistors Low capacitance Avalanche energy rated
Maker NXP
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