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PHP6N10E - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.

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Datasheet Details

Part number PHP6N10E
Manufacturer NXP
File Size 53.42 KB
Description PowerMOS transistor
Datasheet download datasheet PHP6N10E Datasheet
Additional preview pages of the PHP6N10E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 100 6.3 50 0.
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