| Part | PHP6N10E |
|---|---|
| Description | PowerMOS transistor |
| Category | Transistor |
| Manufacturer | NXP Semiconductors |
| Size | 53.42 KB |
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 100 6.3 50 0.54 UNIT V A W Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| UnikeyIC | 400000 | 100+ : 0.2158 USD 200+ : 0.2122 USD 300+ : 0.2068 USD |
View Offer |
| Unikeyic (ICkey) | 400000 | 100+ : 0.2158 USD 200+ : 0.2122 USD 300+ : 0.2068 USD |
View Offer |
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