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PHP65N06LT - TrenchMOS transistor Logic level FET

Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHP65N06LT, PHB65N06LT SYMBOL d QUICK.

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Datasheet preview – PHP65N06LT

Datasheet Details

Part number PHP65N06LT
Manufacturer NXP Semiconductors
File Size 71.46 KB
Description TrenchMOS transistor Logic level FET
Datasheet download datasheet PHP65N06LT Datasheet
Additional preview pages of the PHP65N06LT datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP65N06LT, PHB65N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 63 A g s RDS(ON) ≤ 18 mΩ (VGS = 5 V) RDS(ON) ≤ 16 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP65N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
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