PHP54N06T
PHP54N06T is N-Channel MOSFET manufactured by NXP Semiconductors.
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- DC-to-DC convertors
- Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
- -
55 V
- -
54 A
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
- -
118 W
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 40 A;
VDS = 44 V; Tj = 25 °C; see Figure 13
- 11.5
- n C
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A;
- Tj = 175 °C; see Figure 11 and 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 and 12
- 40 mΩ
17 20 mΩ
NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin...
