900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PHP54N06T Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

PHP54N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 February 2001
Product specification
M3D307
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP54N06T in SOT78 (TO-220AB).
2. Features
s Low on-state resistance
s 175 °C rated.
3. Applications
s DC to DC converters
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.


NXP Semiconductors Electronic Components Datasheet

PHP54N06T Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A
Tj = 25 °C
Tj = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IS source (diode forward) current (DC)
ISM peak source (diode forward) current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 48 A;
VDS 55 V; VGS = 10 V; RGS = 50 ;
starting Tmb = 25 °C
Typ Max Unit
55 V
54 A
118 W
175 °C
17 20 m
40 m
Min Max Unit
55 V
55 V
− ±20 V
54 A
38 A
217 A
118 W
55 +175 °C
55 +175 °C
54 A
217 A
115 mJ
9397 750 08022
Product specification
Rev. 01 — 14 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 13


Part Number PHP54N06T
Description N-channel enhancement mode field-effect transistor
Maker NXP
PDF Download

PHP54N06T Datasheet PDF






Similar Datasheet

1 PHP54N06T N-channel enhancement mode field-effect transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy