PHP50N06LT
FEATURES
- ’Trench’ technology
- Very low on-state resistance
- Fast switching
- Stable off-state characteristics
- High thermal cycling performance
- Low thermal resistance
PHP50N06LT, PHB50N06LT, PHD50N06LT
SYMBOL d
QUICK REFERENCE DATA VDSS = 55 V ID = 50 A g s
RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 22 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP50N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB50N06LT is supplied in the SOT404 surface mounting package. The PHD50N06LT is supplied in the SOT428 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION
SOT78 (TO220AB) tab
SOT404 tab
SOT428 tab gate drain1 source
2 drain
1 23
LIMITING VALUES
Limiting values in accordance with the...
