PHP4N50E Overview
Description
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 500 5.3 100 1.5 UNIT V A W Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION.
