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NXP Semiconductors Electronic Components Datasheet

PHP47NQ10T Datasheet

N-channel enhancement mode field-effect transistor

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PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 May 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP47NQ10T in SOT78 (TO-220AB)
PHB47NQ10T in SOT404 (D2-PAK).
2. Features
s Fast switching
s Very low on-state resistance.
3. Applications
s DC to DC converters
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2 drain (d) [1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
MBK106
123
2
1 3 MBK116
SOT78 (TO-220AB)
SOT404 (D2-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.


NXP Semiconductors Electronic Components Datasheet

PHP47NQ10T Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Conditions
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
Tj = 25 °C; VGS = 10 V; ID = 25 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V
Figure 2 and 3
Tmb = 100 °C; VGS = 10 V
Figure 2
IDM peak drain current
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IS source (diode forward) current Tmb = 25 °C
(DC)
ISM
peak source (diode forward)
Tmb = 25 °C; pulsed; tp 10 µs
current
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load;
IAS = 30 A; tp = 0.1 ms; VDD 25 V;
RGS = 50 ; VGS = 5 V; starting
Tj = 25 °C; Figure 4
Typ Max
100
47
166
175
20 28
Unit
V
A
W
°C
m
Min Max
100
100
− ±20
47
33
187
166
55 175
55 175
47
187
Unit
V
V
V
A
A
A
W
°C
°C
A
A
45 mJ
9397 750 08243
Product data
Rev. 01 — 16 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 14


Part Number PHP47NQ10T
Description N-channel enhancement mode field-effect transistor
Maker NXP
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