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PHP36N03LT Datasheet

N-channel TrenchMOS logic level FET

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PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
Rev. 02 — 8 June 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Logic level compatible
I Low gate charge
1.3 Applications
I DC-to-DC converters
I Switched-mode power supplies
1.4 Quick reference data
I VDS 30 V
I RDSon 17 m
I ID 43.4 A
I Ptot 57.6 W
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
mb mounting base;
connected to drain
Simplified outline
[1]
mb
2
13
Symbol
mb
D
G
mbb076 S
SOT428 (DPAK)
123
SOT78 (3-lead TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT428 package.


NXP Semiconductors Electronic Components Datasheet

PHP36N03LT Datasheet

N-channel TrenchMOS logic level FET

No Preview Available !

Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
PHD36N03LT
DPAK
PHP36N03LT
SC-46
Description
plastic single-ended surface-mounted package; 3 leads (one lead
cropped)
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
4. Limiting values
Version
SOT428
SOT78
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
Min Max Unit
- 30 V
- 30 V
- ±20 V
- 43.4 A
- 30.7 A
- 173.6 A
- 57.6 W
55 +175 °C
55 +175 °C
- 43.4 A
- 173.6 A
PHD_PHP36N03LT_2
Product data sheet
Rev. 02 — 8 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 13


Part Number PHP36N03LT
Description N-channel TrenchMOS logic level FET
Maker NXP
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