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PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
Rev. 02 — 8 June 2006 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Logic level compatible I Low gate charge
1.3 Applications
I DC-to-DC converters I Switched-mode power supplies
1.4 Quick reference data
I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.4 A I Ptot ≤ 57.6 W
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
G
[1]
Simplified outline
mb mb
Symbol
D
2 1 3 1 2 3
mbb076
S
SOT428 (DPAK)
[1]
SOT78 (3-lead TO-220AB)
It is not possible to make a connection to pin 2 of the SOT428 package.