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PHP33NQ20T Datasheet

N-channel TrenchMOS standard level FET

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PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Low thermal resistance
s Fast switching
s Low gate charge.
1.3 Applications
s DC-to-DC primary side switching.
1.4 Quick reference data
s VDS 200 V
s RDSon 77 m
s ID 32.7 A
s Qgd = 9.6 nC (typ).
2. Pinning information
Table 1: Discrete pinning
Pin Description
Simplified outline
1 gate
2 drain
[1] mb
3 source
mb mounting base;
connected to drain
Symbol
mb D
G
mbb076 S
123
SOT78 (TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
2
13
SOT404 (D2-PAK)


NXP Semiconductors Electronic Components Datasheet

PHP33NQ20T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
PHP/PHB33NQ20T
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHP33NQ20T
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead SOT78
TO-220AB
PHB33NQ20T
D2-PAK
Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 10.4 A;
tp = 0.14 ms; VDD 200 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min Max Unit
- 200 V
- 200 V
- ±20 V
- 32.7 A
- 23.1 A
- 65.4 A
- 230 W
55 +175 °C
55 +175 °C
- 32.7 A
- 65.4 A
- 190 mJ
9397 750 14003
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 13


Part Number PHP33NQ20T
Description N-channel TrenchMOS standard level FET
Maker NXP
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