PHP33NQ20T Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode field effect transistor in a plastic package using Trench MOS™ technology. 1.2 Features s Low on-state resistance s Low thermal resistance s Fast switching s Low gate charge. 1.3 Applications s DC-to-DC primary side switching. 1.4 Quick reference data s VDS ≤ 200 V s RDSon ≤ 77 mΩ s ID ≤ 32.7 A s Qgd = 9.6 n C (typ). 2. Pinning information Table 1: 1 2 3 mb gate drain source mounting base; connected to drain [1] Discrete pinning Simplified outline mb mb Pin Description Symbol G mbb076 2 1 1 2 3 3 SOT78 (TO-220AB) [1] It is not possible to make a connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) Philips Semiconductors PHP/PHB33NQ20T N-channel Trench MOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHP33NQ20T PHB33NQ20T TO-220AB D2-PAK Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB Version SOT78 Type number Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404 cropped) 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 10.4 A; tp = 0.14 ms; VDD ≤ 200 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min - 55 - 55 Max 200 200 ±20 32.7 23.1 65.4 230 +175 +175 32.7 65.4 190 Unit V V V A A A W °C °C A A m J Source-drain diode Avalanche ruggedness...