PHP30NQ15T Datasheet | NXP Semiconductors

FEATURES - ’Trench’ technology - Very low on-state resistance - Fast switching - Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 29 A g RDS(ON) ≤ 63 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB30NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. PINNING PIN 1 2 3 tab gate drain1 source drain DESCRIPTION SOT78 (TO220AB) tab SOT404 (D2PAK) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 150 150 ± 20 29 20 116 150 175 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin:2 of the SOT404 package August 1999 1 Rev 1.000 Philips Semiconductors Product specification N-channel Trench MOS™ transistor PHP30NQ15T, PHB30NQ15T AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 26 A; tp = 0.2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig:15 MIN. MAX. 502 UNIT m J - 29 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 in free air SOT404 package, pcb...