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PHP3055 - PowerMOS transistor Logic level FET

Description

N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching SYMBOL d QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP3055E, PHD3055E FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 10.3 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
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