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PHP29N08T Datasheet

TrenchMOS standard level FET

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PHP/PHB29N08T
TrenchMOS™ standard level FET
Rev. 01 — 29 May 2002
Product data
1. Description
N-channel standard level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP29N08T in SOT78 (TO-220AB)
PHB29N08T in SOT404 (D2-PAK).
2. Features
s High noise immunity
s Low on-state resistance.
3. Applications
s Industrial motor control.
4. Pinning information
Table 1: Pinning - SOT78, SOT404 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
3 source (s)
mb mounting base,
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
mb
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s


NXP Semiconductors Electronic Components Datasheet

PHP29N08T Datasheet

TrenchMOS standard level FET

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Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 11 V
Tmb = 25 °C
VGS = 11 V; ID = 14 A
Tj = 25 °C
Tj = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
IDM peak drain current
Ptot total power dissipation
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
Tmb = 25 °C; VGS = 11 V; Figure 2 and 3
Tmb = 100 °C; VGS = 11 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 °C
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Typ Max Unit
- 75 V
- 27 A
- 88 W
- 175 °C
40 50 m
96 120 m
Min Max Unit
- 75 V
- 75 V
- ±30 V
- 27 A
- 19.2 A
- 108 A
- 88 W
55 +175 °C
55 +175 °C
- 27 A
- 108 A
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 13


Part Number PHP29N08T
Description TrenchMOS standard level FET
Maker NXP
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PHP29N08T Datasheet PDF






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