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NXP Semiconductors Electronic Components Datasheet

PHP28NQ15T Datasheet

N-channel TrenchMOS standard level FET

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PHP28NQ15T
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N-channel TrenchMOS standard level FET
Rev. 01 — 17 August 2005
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s Low body diode Qr
1.3 Applications
s DC-to-DC converters
s DC-to-AC inverters
s Fast switching
s Switched-mode power supplies
s Class-D audio
1.4 Quick reference data
s VDS 150 V
s RDSon 65 m
s ID 28.5 A
s QGD = 7.5 nC (typ)
2. Pinning information
Table 1: Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
mb mounting base; connected to drain
Simplified outline
mb
Symbol
D
G
mbb076 S
123
SOT78 (TO-220AB)


NXP Semiconductors Electronic Components Datasheet

PHP28NQ15T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
PHP28NQ15T
www.DataSheet4U.com
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
PHP28NQ15T
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
25 °C Tj 175 °C
- 150 V
25 °C Tj 175 °C; RGS = 20 k
- 150 V
- ±20 V
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
-
28.5 A
Tmb = 100 °C; VGS = 10 V; see Figure 2
- 20.2 A
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
-
57.1 A
Tmb = 25 °C; see Figure 1
- 150 W
55 +175 °C
55 +175 °C
Source-drain diode
IS source current
ISM peak source current
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
- 28.5 A
- 57.1 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 9.9 A;
tp = 0.1 ms; VDD 150 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
- 100 mJ
PHP28NQ15T_1
Product data sheet
Rev. 01 — 17 August 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2 of 12


Part Number PHP28NQ15T
Description N-channel TrenchMOS standard level FET
Maker NXP
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