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NXP Semiconductors Electronic Components Datasheet

PHP26N10E Datasheet

PowerMOS transistor

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Philips Semiconductors
PowerMOS transistor
Product specification
PHP26N10E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
100
26
125
0.08
UNIT
V
A
W
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
ID Continuous drain current
IDM
PD
PD/Tmb
VGS
EAS
IAS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Tj, Tstg
Operating junction and
storage temperature range
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
Tmb > 25 ˚C
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
26
18
104
125
0.833
± 30
230
26
175
UNIT
A
A
A
W
W/K
V
mJ
A
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
-
TYP. MAX. UNIT
- 1.2 K/W
60 - K/W
February 1997
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHP26N10E Datasheet

PowerMOS transistor

No Preview Available !

Philips Semiconductors
PowerMOS transistor
Product specification
PHP26N10E
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
V(BR)DSS /
Tj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
IGSS
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Ld
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VGS = 10 V; ID = 17 A
VDS = VGS; ID = 0.25 mA
VDS = 50 V; ID = 17 A
VDS = 100 V; VGS = 0 V
VDS = 80 V; VGS = 0 V; Tj = 150 ˚C
VGS = ±30 V; VDS = 0 V
ID = 17 A; VDD = 80 V; VGS = 10 V
VDD = 50 V; ID = 17 A;
RG = 9.1 ; RD = 2.9
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
Tmb = 25˚C
(body diode)
ISM Pulsed source current (body Tmb = 25˚C
diode)
VSD Diode forward voltage
IS = 28 A; VGS = 0 V
trr Reverse recovery time IS = 17 A; VGS = 0 V;
dI/dt = 100 A/µs
Qrr Reverse recovery charge
MIN. TYP. MAX. UNIT
100 - - V
- 0.15 - V/K
- 0.07 0.08
2.0 3.0 4.0 V
8.7 16
-
S
- 1 25 µA
- 100 250 µA
- 10 100 nA
- 35 45 nC
- 7 9 nC
- 17 25 nC
- 18 -
- 40 -
- 125 -
- 50 -
ns
ns
ns
ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 1650 -
- 350 -
- 100 -
pF
pF
pF
MIN. TYP. MAX. UNIT
- - 26 A
- - 104 A
- - 1.7 V
- 90 - ns
- 0.8 - µC
February 1997
2
Rev 1.000


Part Number PHP26N10E
Description PowerMOS transistor
Maker NXP
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