PHP23NQ15T Overview
Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance.
Key Features
- Low on-state resistance
- Fast switching
- Low SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 23 A g RDS(ON) ≤ 90 mΩ s
