PHP23NQ15T
FEATURES
- ’Trench’ technology
- Low on-state resistance
- Fast switching
- Low thermal resistance
SYMBOL d
QUICK REFERENCE DATA VDSS = 150 V ID = 23 A g
RDS(ON) ≤ 90 mΩ s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP23NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source drain DESCRIPTION
SOT78 (TO220AB) tab
SOT404 (D2PAK) tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and...
