Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP23NQ15T, PHB23NQ15T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 18 A;
energy
tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:15
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
180
UNIT
mJ
- 23 A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 1.1 K/W
SOT78 package, in free air
- 60 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 11 A
VGS = ± 10 V; VDS = 0 V
VDS = 150 V; VGS = 0 V;
Tj = -55˚C
Tj = 175˚C
Tj = -55˚C
Tj = 175˚C
Tj = 175˚C
ID = 23 A; VDD = 120 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 75 V; RD = 3.3 Ω;
VGS = 10 V; RG = 5.6 Ω
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
150 -
-V
133 -
-V
234V
1- -V
- 6V
- 75 90 mΩ
- - 252 mΩ
- 10 100 nA
- 0.05 10 µA
- - 500 µA
- 44 - nC
- 9 - nC
- 20 - nC
- 12 - ns
- 44 - ns
- 50 - ns
- 34 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 1780 -
- 206 -
- 118 -
pF
pF
pF
August 1999
2
Rev 1.000
