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PHP23NQ11T Datasheet

N-channel TrenchMOS standard level FET

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PHP23NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
- - 110 V
- - 23 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 100 W
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 23 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
- 10 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 13 A; Tj = 25 °C;
see Figure 9 and 10
-
49 70 m


NXP Semiconductors Electronic Components Datasheet

PHP23NQ11T Datasheet

N-channel TrenchMOS standard level FET

No Preview Available !

NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
PHP23NQ11T
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PHP23NQ11T
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current Tmb = 25 °C
ISM peak source current tp 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 14 A; Vsup 100 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50
energy
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
Min Max Unit
- 110 V
- 110 V
-20 20
V
- 16 A
- 23 A
- 92 A
- 100 W
-55 175 °C
-55 175 °C
- 23 A
- 92 A
- 93 mJ
© NXP B.V. 2010. All rights reserved.
2 of 13


Part Number PHP23NQ11T
Description N-channel TrenchMOS standard level FET
Maker NXP
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