PHP225
description
Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
- Motor and actuator drivers
- Power management
- Synchronized rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tsp ≤ 80 °C Tsp = 80 °C
Min Typ Max Unit
- -
-30 V
- -
-2.3 A
[1]
- -
2W
VGS = -10 V; ID = -1 A; Tj = 25 °C
- 0.22 0.25 Ω
VGS = -10 V; ID = -2.3 A; VDS = -15 V;...
