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NXP Semiconductors Electronic Components Datasheet

PHP225 Datasheet

Dual P-channel enhancement mode MOS transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PHP225
Dual P-channel enhancement
mode MOS transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC13b
1997 Jun 20


NXP Semiconductors Electronic Components Datasheet

PHP225 Datasheet

Dual P-channel enhancement mode MOS transistor

No Preview Available !

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Product specification
PHP225
FEATURES
High-speed switching
No secondary breakdown
Very low on-resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN SYMBOL
1 s1
2 g1
3 s2
4 g2
5 d2
6 d2
7 d1
8 d1
handbook, halfpage
8
5
14
MAM119
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
d1 d1
d2 d2
s1 g1 s2 g2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Per P-channel
VDS
VSD
VGSO
VGSth
ID
RDSon
Ptot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
MIN.
MAX.
UNIT
IS = 1.25 A
open drain
ID = 1 mA; VDS = VGS
ID = 1 A; VGS = 10 V
Ts = 80 °C
1
30 V
1.6 V
±20 V
2.8 V
2.3 A
0.25
2W
1997 Jun 20
2


Part Number PHP225
Description Dual P-channel enhancement mode MOS transistor
Maker NXP
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PHP225 Datasheet PDF






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