PHP222 - Dual P-channel enhancement mode MOS transistor

NXP Semiconductors

General Description

Two P-channel enhancement mode MOS transistors in an 8-pin SOT96-1 (SO8) SMD plastic package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

Very low on-state resistance.
High-speed switching.
No secondary breakdown.
Low threshold.

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PHP222 dual p-channel enhancement mode mos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PHP222
Manufacturer	NXP Semiconductors
File Size	54.63 KB
Description	Dual P-channel enhancement mode MOS transistor
Datasheet	PHP222 Datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP222 Dual P-channel enhancement mode MOS transistor Preliminary speciﬁcation Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 1998 Apr 01 Philips Semiconductors Preliminary speciﬁcation Dual P-channel enhancement mode MOS transistor FEATURES • Very low on-state resistance • High-speed switching • No secondary breakdown • Low threshold. APPLICATIONS • Power management • DC-DC converters • General purpose switch. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin SOT96-1 (SO8) SMD plastic package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.