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PHP222 Datasheet

Dual P-channel enhancement mode MOS transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D315
PHP222
Dual P-channel enhancement
mode MOS transistor
Preliminary specification
Supersedes data of 1998 Mar 24
File under Discrete Semiconductors, SC13
1998 Apr 01


NXP Semiconductors Electronic Components Datasheet

PHP222 Datasheet

Dual P-channel enhancement mode MOS transistor

No Preview Available !

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Preliminary specification
PHP222
FEATURES
Very low on-state resistance
High-speed switching
No secondary breakdown
Low threshold.
APPLICATIONS
Power management
DC-DC converters
General purpose switch.
PINNING - SOT96-1 (SO8)
PIN SYMBOL
1 s1
2 g1
3 s2
4 g2
5 d2
6 d2
7 d1
8 d1
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin SOT96-1 (SO8) SMD plastic package.
handbook, halfpage
8
5
d1 d1
d2 d2
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
14
MAM119
s1 g1 s2 g2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VSD
VGSO
VGSth
ID
RDSon
Ptot
PARAMETER
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
IS = 1.25 A; VGD = 0
open drain
ID = 1 mA; VDS = VGS
Ts = 80 °C
ID = 1.6 A; VGS = 2.5 V
Ts = 80 °C
MIN.
0.4
MAX.
30
1.3
±8
3.2
220
3.5
UNIT
V
V
V
V
A
m
W
1998 Apr 01
2


Part Number PHP222
Description Dual P-channel enhancement mode MOS transistor
Maker NXP
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PHP222 Datasheet PDF






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