PHP21N06LT
FEATURES
- ’Trench’ technology
- Low on-state resistance
- Fast switching
- Logic level patible g
PHP21N06LT, PHB21N06LT PHD21N06LT
QUICK REFERENCE DATA d
SYMBOL
VDSS = 55 V ID = 19 A RDS(ON) ≤ 75 mΩ (VGS = 5 V) RDS(ON) ≤ 70 mΩ (VGS = 10 V) s
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- d.c. to d.c. converters
- switched mode power supplies The PHP21N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB21N06LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD21N06LT is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION gate drain 1 source
SOT78 (TO220AB) tab
SOT404 (D2PAK) tab
SOT428 (DPAK) tab
1 23
3 drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS VGSM ID IDM PD Tj, Tstg Drain-source voltage...
