PHP21N06
Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.
Key Features
- very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV
- It is intended for use in DC-DC converters and general purpose switching applications
- 55 21 69 175 75 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION
