900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PHP21N06 Datasheet

TrenchMOSO transistor Standard level FET

No Preview Available !

Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
PHP21N06T
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in DC-DC
converters and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
21
69
175
75
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
21
14.7
84
69
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
60
MAX.
2.18
-
UNIT
K/W
K/W
December 1997
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

PHP21N06 Datasheet

TrenchMOSO transistor Standard level FET

No Preview Available !

Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
PHP21N06T
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
VGS = 0 V; ID = 0.25 mA;
voltage
Tj = -55˚C
Gate threshold voltage
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
Zero gate voltage drain current VDS = 55 V; VGS = 0 V;
Tj = 175˚C
Gate source leakage current VGS = ±10 V; VDS = 0 V
Tj = 175˚C
Gate source breakdown voltage IG = ±1 mA;
Drain-source on-state
VGS = 10 V; ID = 10 A
resistance
Tj = 175˚C
MIN.
55
50
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.04
-
-
60
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
75
157
UNIT
V
V
V
V
µA
µA
µA
µA
V
m
m
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 10 A
ID = 20 A; VDD = 44 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 10 A;
VGS = 10 V; RG = 10
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
1
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
13
4
5
365
110
60
9
16
14
13
3.5
MAX.
-
-
-
-
500
135
85
14
21
25
20
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
- 4.5 - nH
- 7.5 - nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR Continuous reverse drain
current
IDRM Pulsed reverse drain current
VSD Diode forward voltage
IF = 19.7 A; VGS = 0 V
trr Reverse recovery time IF = 19.7 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
- - 21 A
- - 84 A
- 0.95 1.2 V
- 32 -
- 0.12 -
ns
µC
December 1997
2
Rev 1.100


Part Number PHP21N06
Description TrenchMOSO transistor Standard level FET
Maker NXP
PDF Download

PHP21N06 Datasheet PDF






Similar Datasheet

1 PHP21N06 TrenchMOSO transistor Standard level FET
NXP
2 PHP21N06 N-channel TrenchMOS transistor Logic level FET
NXP
3 PHP21N06LT N-channel TrenchMOS transistor Logic level FET
NXP
4 PHP21N06T TrenchMOSO transistor Standard level FET
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy