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NXP Semiconductors Electronic Components Datasheet

PHP212 Datasheet

Dual P-channel enhancement mode MOS transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PHP212
Dual P-channel enhancement
mode MOS transistor
Product specification
Supersedes data of 1996 Oct 23
File under Discrete Semiconductors, SC13b
1997 Jun 18


NXP Semiconductors Electronic Components Datasheet

PHP212 Datasheet

Dual P-channel enhancement mode MOS transistor

No Preview Available !

Philips Semiconductors
Dual P-channel enhancement mode
MOS transistor
Product specification
PHP212
FEATURES
High-speed switching
No secondary breakdown
Very low on-state resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN SYMBOL
1 s1
2 g1
3 s2
4 g2
5 d2
6 d2
7 d1
8 d1
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
handbook, halfpage
8
5
d1 d1
d2 d2
14
MAM119
s1 g1 s2
Fig.1 Simplified outline and symbol.
g2
QUICK REFERENCE DATA
SYMBOL
VDS
VSD
VGS
VGSth
ID
RDSon
Ptot
PARAMETER
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
IS = 1.25 A
ID = 1 mA; VDS = VGS
Ts = 80 °C
ID = 2 A; VGS = 10 V
Ts = 80 °C
MIN.
1
MAX.
30
1.3
±20
2.8
4
0.12
3.5
UNIT
V
V
V
V
A
W
1997 Jun 18
2


Part Number PHP212
Description Dual P-channel enhancement mode MOS transistor
Maker NXP
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PHP212 Datasheet PDF






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