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NXP Semiconductors Electronic Components Datasheet

PHP20N06T Datasheet

N-channel TrenchMOS transistor

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PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
Rev. 01 — 22 February 2001
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP20N06T in SOT78 (TO-220AB)
PHB20N06T in SOT404 (D 2-PAK).
2. Features
s Very low on-state resistance
s Fast switching.
3. Applications
s Switched mode power supplies
s DC to DC converters.
c
4. Pinningc information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
3 source (s)
mb mounting base;
connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.
Symbol
d
g
MBB076
s


NXP Semiconductors Electronic Components Datasheet

PHP20N06T Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 175 oC
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 10 A
Tj = 25 °C
Tj = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IDR reverse drain current (DC)
IDRM
pulsed reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 11 A;
VDS 55 V; VGS = 10 V; RGS = 50 ;
starting Tmb = 25 °C
Typ Max Unit
55 V
20.3 A
62 W
175 °C
64 75 m
150 m
Min Max Unit
55 V
55 V
− ±20 V
20.3 A
14.3 A
81 A
62 W
55 +175 °C
55 +175 °C
20.3 A
81 A
30.3 mJ
9397 750 07894
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 15


Part Number PHP20N06T
Description N-channel TrenchMOS transistor
Maker NXP
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PHP20N06T Datasheet PDF






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