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NXP Semiconductors Electronic Components Datasheet

PHP20N06E Datasheet

PowerMOS transistor

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Philips Semiconductors
PowerMOS transistor
Product specification
PHP20N06E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a plastic
envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding, DC/DC
and AC/DC converters, and in
automotive and general purpose
switching applications.
SYMBOL
VDS
ID
Ptot
Tj
RDS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
22
75
175
0.08
UNIT
V
A
W
˚C
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 k
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
-
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MAX.
60
60
30
22
15
88
75
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 2 K/W
- 60 - K/W
August 1996
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHP20N06E Datasheet

PowerMOS transistor

No Preview Available !

Philips Semiconductors
PowerMOS transistor
Product specification
PHP20N06E
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
VDS = 60 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 10 A
MIN. TYP. MAX. UNIT
60 - - V
2.1 3.0 4.0 V
- 1 10 µA
- 0.1 1.0 mA
- 10 100 nA
- 0.07 0.08
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs Forward transconductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 10 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 ;
Rgen = 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
4.5
-
-
-
-
-
-
-
-
TYP.
6.5
650
240
120
10
35
60
55
3.5
MAX.
-
825
350
160
20
55
90
80
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
- 4.5 - nH
- 7.5 - nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM Pulsed reverse drain current -
VSD Diode forward voltage
IF = 22 A ; VGS = 0 V
trr Reverse recovery time IF = 22 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 22 A ; VDD 25 V ;
VGS = 10 V ; RGS = 50
MIN. TYP. MAX. UNIT
- - 22 A
- - 88 A
- 1.3 1.7 V
- 60 -
- 0.25 -
ns
µC
MIN. TYP. MAX. UNIT
- - 50 mJ
August 1996
2
Rev 1.000


Part Number PHP20N06E
Description PowerMOS transistor
Maker NXP
PDF Download

PHP20N06E Datasheet PDF






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