Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 175 oC
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 10 A
Tj = 25 °C
Tj = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IDR reverse drain current (DC)
IDRM
pulsed reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 11 A;
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
Typ Max Unit
− 55 V
− 20.3 A
− 62 W
− 175 °C
64 75 mΩ
− 150 mΩ
Min Max Unit
− 55 V
− 55 V
− ±20 V
− 20.3 A
− 14.3 A
− 81 A
− 62 W
−55 +175 °C
−55 +175 °C
− 20.3 A
− 81 A
− 30.3 mJ
9397 750 07894
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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