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NXP Semiconductors Electronic Components Datasheet

PHP206 Datasheet

Dual P-channel enhancement mode MOS transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D315
PHP206
Dual P-channel enhancement
mode MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1998 Feb 05


NXP Semiconductors Electronic Components Datasheet

PHP206 Datasheet

Dual P-channel enhancement mode MOS transistor

No Preview Available !

Philips Semiconductors
Dual P-channel enhancement mode
MOS transistor
Objective specification
PHP206
FEATURES
High-speed switching
No secondary breakdown
Very low on-state resistance.
APPLICATIONS
Motor driver
Power management
DC-DC converters
General purpose switching.
PINNING - SOT96-1 (SO8)
PIN SYMBOL
1 s1
2 g1
3 s2
4 g2
5 d2
6 d2
7 d1
8 d1
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling. For further
information, refer to Philips specs.: SNW-EQ-608,
SNW-FQ-302A and SNW-FQ-302B.
handbook, halfpage
8
5
d1 d1
d2 d2
14
MAM119
s1 g1 s2 g2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Per P-channel
VDS
VSD
VGS
VGSth
ID
RDSon
Ptot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
MIN.
MAX.
UNIT
VGD = 0; IS = 1.25 A
VDS = VGS; ID = 1 mA
Ts = 80 °C
VGS = 10 V; ID = 2.8 A
Ts = 80 °C
1
30 V
1.3 V
±20 V
V
5.6 A
65 m
3.5 W
1998 Feb 05
2


Part Number PHP206
Description Dual P-channel enhancement mode MOS transistor
Maker NXP
PDF Download

PHP206 Datasheet PDF






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